Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Identifieur interne : 000061 ( Russie/Analysis ); précédent : 000060; suivant : 000062Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Auteurs : RBID : Pascal:11-0142203Descripteurs français
- Pascal (Inist)
- Puits quantique, Nanomatériau, Semiconducteur III-V, Composé III-V, Superréseau, Electroluminescence, Mécanisme croissance, Structure défaut, Couche tampon, Puce à bosses, Rendement quantique, Nanostructure, Méthode MOCVD, Nitrure de gallium, Nitrure d'indium, Nickel, Argent, InGaN, GaN, 8107S, 8107, 8105E, 7860F.
- Wicri :
English descriptors
- KwdEn :
Abstract
In spite of the great progress in III-N technology, LEDs with wavelength > 530 nm still exhibit low efficiency compared to blue and short-wavelength-green LEDs. Here we report on significant improvement of deep-green LED properties by modifications of the structure design. The combination of InGaN/GaN superlattice followed by low-temperature GaN is the key element to increase the electroluminescence efficiency for deep-green LED. Various techniques were employed to clarify the correlation between structure properties, growth regimes and design. Modification of the defect structure of the GaN buffer by InGaN layers appears to be mostly responsible for the observed effect. LEDs processed and assembled in a standard flip-chip geometry with Ni-Ag p-contact demonstrate external quantum efficiencies of 8-20% in the 560-530 nm range.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 003495
- to stream Main, to step Repository: 002552
- to stream Russie, to step Extraction: 000061
Links to Exploration step
Pascal:11-0142203Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice</title><author><name sortKey="Lundin, W V" uniqKey="Lundin W">W. V. Lundin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Nikolaev, A E" uniqKey="Nikolaev A">A. E. Nikolaev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sakharov, A V" uniqKey="Sakharov A">A. V. Sakharov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Zavarin, E E" uniqKey="Zavarin E">E. E. Zavarin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Valkovskiy, G A" uniqKey="Valkovskiy G">G. A. Valkovskiy</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Yagovkina, M A" uniqKey="Yagovkina M">M. A. Yagovkina</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Usov, S O" uniqKey="Usov S">S. O. Usov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kryzhanovskaya, N V" uniqKey="Kryzhanovskaya N">N. V. Kryzhanovskaya</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sizov, V S" uniqKey="Sizov V">V. S. Sizov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Brunkov, P N" uniqKey="Brunkov P">P. N. Brunkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Zakgeim, A L" uniqKey="Zakgeim A">A. L. Zakgeim</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Cherniakov, A E" uniqKey="Cherniakov A">A. E. Cherniakov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Cherkashin, N A" uniqKey="Cherkashin N">N. A. Cherkashin</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CEMES/CNRS, 29 rue Jeanne Marvig</s1><s2>31055 Toulouse</s2><s3>FRA</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation></author><author><name sortKey="Hytch, M J" uniqKey="Hytch M">M. J. Hytch</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CEMES/CNRS, 29 rue Jeanne Marvig</s1><s2>31055 Toulouse</s2><s3>FRA</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation></author><author><name sortKey="Yakovlev, E V" uniqKey="Yakovlev E">E. V. Yakovlev</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>STR Group-Soft-Impact Ltd., P.O. Box 89</s1><s2>St. Petersburg 194156</s2><s3>RUS</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194156</wicri:noRegion></affiliation></author><author><name sortKey="Bazarevskiy, D S" uniqKey="Bazarevskiy D">D. S. Bazarevskiy</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>STR Group-Soft-Impact Ltd., P.O. Box 89</s1><s2>St. Petersburg 194156</s2><s3>RUS</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194156</wicri:noRegion></affiliation></author><author><name sortKey="Rozhavskaya, M M" uniqKey="Rozhavskaya M">M. M. Rozhavskaya</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Tsatsulnikov, A F" uniqKey="Tsatsulnikov A">A. F. Tsatsulnikov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0142203</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0142203 INIST</idno><idno type="RBID">Pascal:11-0142203</idno><idno type="wicri:Area/Main/Corpus">003495</idno><idno type="wicri:Area/Main/Repository">002552</idno><idno type="wicri:Area/Russie/Extraction">000061</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer layer</term><term>Defect structure</term><term>Electroluminescence</term><term>Flip-chip</term><term>Gallium nitride</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium nitride</term><term>MOCVD</term><term>Nanostructured materials</term><term>Nanostructures</term><term>Nickel</term><term>Quantum wells</term><term>Quantum yield</term><term>Silver</term><term>Superlattices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Puits quantique</term><term>Nanomatériau</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Superréseau</term><term>Electroluminescence</term><term>Mécanisme croissance</term><term>Structure défaut</term><term>Couche tampon</term><term>Puce à bosses</term><term>Rendement quantique</term><term>Nanostructure</term><term>Méthode MOCVD</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Nickel</term><term>Argent</term><term>InGaN</term><term>GaN</term><term>8107S</term><term>8107</term><term>8105E</term><term>7860F</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nickel</term><term>Argent</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In spite of the great progress in III-N technology, LEDs with wavelength > 530 nm still exhibit low efficiency compared to blue and short-wavelength-green LEDs. Here we report on significant improvement of deep-green LED properties by modifications of the structure design. The combination of InGaN/GaN superlattice followed by low-temperature GaN is the key element to increase the electroluminescence efficiency for deep-green LED. Various techniques were employed to clarify the correlation between structure properties, growth regimes and design. Modification of the defect structure of the GaN buffer by InGaN layers appears to be mostly responsible for the observed effect. LEDs processed and assembled in a standard flip-chip geometry with Ni-Ag p-contact demonstrate external quantum efficiencies of 8-20% in the 560-530 nm range.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>315</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)</s1></fA09><fA11 i1="01" i2="1"><s1>LUNDIN (W. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>NIKOLAEV (A. E.)</s1></fA11><fA11 i1="03" i2="1"><s1>SAKHAROV (A. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>ZAVARIN (E. E.)</s1></fA11><fA11 i1="05" i2="1"><s1>VALKOVSKIY (G. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>YAGOVKINA (M. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>USOV (S. O.)</s1></fA11><fA11 i1="08" i2="1"><s1>KRYZHANOVSKAYA (N. V.)</s1></fA11><fA11 i1="09" i2="1"><s1>SIZOV (V. S.)</s1></fA11><fA11 i1="10" i2="1"><s1>BRUNKOV (P. N.)</s1></fA11><fA11 i1="11" i2="1"><s1>ZAKGEIM (A. L.)</s1></fA11><fA11 i1="12" i2="1"><s1>CHERNIAKOV (A. E.)</s1></fA11><fA11 i1="13" i2="1"><s1>CHERKASHIN (N. A.)</s1></fA11><fA11 i1="14" i2="1"><s1>HYTCH (M. J.)</s1></fA11><fA11 i1="15" i2="1"><s1>YAKOVLEV (E. V.)</s1></fA11><fA11 i1="16" i2="1"><s1>BAZAREVSKIY (D. S.)</s1></fA11><fA11 i1="17" i2="1"><s1>ROZHAVSKAYA (M. M.)</s1></fA11><fA11 i1="18" i2="1"><s1>TSATSULNIKOV (A. F.)</s1></fA11><fA12 i1="01" i2="1"><s1>CANEAU (Catherine)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KUECH (Tom)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Ioffe Physico-Technical Institute of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>18 aut.</sZ></fA14><fA14 i1="02"><s1>Scientific and Technological Center for Microelectronics and Submicron Heterosctructures of the Russian Academy of Science, Politechnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></fA14><fA14 i1="03"><s1>CEMES/CNRS, 29 rue Jeanne Marvig</s1><s2>31055 Toulouse</s2><s3>FRA</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA14 i1="04"><s1>STR Group-Soft-Impact Ltd., P.O. Box 89</s1><s2>St. Petersburg 194156</s2><s3>RUS</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ></fA14><fA20><s1>267-271</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000194603110600</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0142203</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In spite of the great progress in III-N technology, LEDs with wavelength > 530 nm still exhibit low efficiency compared to blue and short-wavelength-green LEDs. Here we report on significant improvement of deep-green LED properties by modifications of the structure design. The combination of InGaN/GaN superlattice followed by low-temperature GaN is the key element to increase the electroluminescence efficiency for deep-green LED. Various techniques were employed to clarify the correlation between structure properties, growth regimes and design. Modification of the defect structure of the GaN buffer by InGaN layers appears to be mostly responsible for the observed effect. LEDs processed and assembled in a standard flip-chip geometry with Ni-Ag p-contact demonstrate external quantum efficiencies of 8-20% in the 560-530 nm range.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07S</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07Z</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H60F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Puits quantique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Quantum wells</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Composé III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>III-V compound</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Superréseau</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Superlattices</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Electroluminescence</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electroluminescence</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Structure défaut</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Defect structure</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Couche tampon</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Buffer layer</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Capa tampón</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Puce à bosses</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Flip-chip</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Rendement quantique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Quantum yield</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Nanostructure</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Nanostructures</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>MOCVD</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>16</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0><s5>16</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Nickel</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Nickel</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Argent</s0><s2>NC</s2><s5>18</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Silver</s0><s2>NC</s2><s5>18</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8107S</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8105E</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>7860F</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>094</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)</s1><s2>15</s2><s3>Incline Village, NV USA</s3><s4>2010-05-23</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000061 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000061 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
|type= RBID
|clé= Pascal:11-0142203
|texte= Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
}}
| This area was generated with Dilib version V0.5.77. |  |